D45H11FP Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 4A 1V.A collector emitter saturation voltage of -1V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 400mA, 8A.An emitter's base voltage can be kept at 5V to gain high efficiency.When collector current reaches its maximum, it can reach 10A volts.

D45H11FP Features

the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V

D45H11FP Applications

There are a lot of STMicroelectronics D45H11FP applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface