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MTD6P10E

MTD6P10E

MTD6P10E

ON Semiconductor

MTD6P10E datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

MTD6P10E Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Current Rating -6A
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.75W Ta 50W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 660m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 29ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Continuous Drain Current (ID) 6A
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.66Ohm
Pulsed Drain Current-Max (IDM) 18A
Avalanche Energy Rating (Eas) 180 mJ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
MTD6P10E Product Details

Description


The MTD6P10E is a Power MOSFET, 6 Amps, 100 Volts with P?Channel DPAK. High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. Another feature of the energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls.



Features


  • Diode is Characterized for Use in Bridge Circuits

  • IDSS and VDS(on) Specified at Elevated Temperature

  • Pb?Free Packages are Available

  • Avalanche Energy Specified

  • Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode



Applications


  • Power supplies

  • Converters

  • PWM motor controls

  • Switch Mode Power Supplies (SMPS)

  • Power-Over-Ethernet (PoE)

  • Solar inverters.

  • Automotive applications

  • Switch, buck and synchronous rectification.

  • Uninterruptible Power Supplies (UPS)

  • Small motor control


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