MTD6P10E datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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MTD6P10E Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
AVALANCHE RATED
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Reach Compliance Code
not_compliant
Current Rating
-6A
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.75W Ta 50W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
660m Ω @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
840pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6A Tc
Gate Charge (Qg) (Max) @ Vgs
22nC @ 10V
Rise Time
29ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±15V
Continuous Drain Current (ID)
6A
Drain Current-Max (Abs) (ID)
6A
Drain-source On Resistance-Max
0.66Ohm
Pulsed Drain Current-Max (IDM)
18A
Avalanche Energy Rating (Eas)
180 mJ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MTD6P10E Product Details
Description
The MTD6P10E is a Power MOSFET, 6 Amps, 100 Volts with P?Channel DPAK. High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. Another feature of the energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls.
Features
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Pb?Free Packages are Available
Avalanche Energy Specified
Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode