MTP50P03HDL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
MTP50P03HDL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2006
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn80Pb20)
Additional Feature
AVALANCHE RATED
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-50A
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
125W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
125W
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
25m Ω @ 25A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
50A Tc
Gate Charge (Qg) (Max) @ Vgs
100nC @ 5V
Rise Time
340ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±15V
Forward Voltage
2.39V
Fall Time (Typ)
218 ns
Turn-Off Delay Time
90 ns
Continuous Drain Current (ID)
50A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
15V
Drain-source On Resistance-Max
0.025Ohm
Drain to Source Breakdown Voltage
-30V
Avalanche Energy Rating (Eas)
1250 mJ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MTP50P03HDL Product Details
MTP50P03HDL Description
High energy can be handled by MTP50P03HDL Power MOSFET in both avalanche and commutation modes. An effective drain-to-source diode with a quick recovery period is also provided by the energy-saving design. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls.
MTP50P03HDL Features
Avalanche Energy Specified
Pb-Free Packages are Available
A diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode