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MTP50P03HDL

MTP50P03HDL

MTP50P03HDL

ON Semiconductor

MTP50P03HDL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

MTP50P03HDL Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
Additional Feature AVALANCHE RATED
HTS Code 8541.29.00.95
Subcategory Other Transistors
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -50A
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 5V
Rise Time 340ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Forward Voltage 2.39V
Fall Time (Typ) 218 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 50A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage -30V
Avalanche Energy Rating (Eas) 1250 mJ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
MTP50P03HDL Product Details

MTP50P03HDL Description


High energy can be handled by MTP50P03HDL Power MOSFET in both avalanche and commutation modes. An effective drain-to-source diode with a quick recovery period is also provided by the energy-saving design. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls.



MTP50P03HDL Features

 

  • Avalanche Energy Specified

  • Pb-Free Packages are Available

  • A diode is Characterized for Use in Bridge Circuits

  • IDSS and VDS(on) Specified at Elevated Temperature

  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode



MTP50P03HDL Applications


  • Automotive

  • Enterprise systems

  • Communications equipment


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