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NCV8440STT3G

NCV8440STT3G

NCV8440STT3G

ON Semiconductor

MOSFET N-CH 59V 2.6A SOT-223-4

SOT-23

NCV8440STT3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status CONSULT SALES OFFICE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.69W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id 1.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 35V
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Drain to Source Voltage (Vdss) 59V
Drive Voltage (Max Rds On,Min Rds On) 3.5V 10V
Vgs (Max) ±15V
Continuous Drain Current (ID) 2.6A
Drain-source On Resistance-Max 0.95Ohm
Pulsed Drain Current-Max (IDM) 10A
DS Breakdown Voltage-Min 52V
Avalanche Energy Rating (Eas) 110 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free

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