NDB6030PL

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Manufacturer part number:NDB6030PL

Manufacturer:ON Semiconductor

Description:NDB6030PL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NDB6030PL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-65°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	25mOhm
Subcategory	Other Transistors
Voltage - Rated DC	-30V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	-30A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	75W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	75W
Case Connection	DRAIN
Turn On Delay Time	12.5 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 19A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1570pF @ 15V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 5V
Rise Time	60ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	52 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	-30A
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	90A
Height	11.33mm
Length	10.67mm
Width	4.83mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free