NDT2955

new-10%

Manufacturer part number:NDT2955

Manufacturer:ON Semiconductor

Description:NDT2955 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NDT2955 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Weight	250.2mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2002
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	300MOhm
Subcategory	Other Transistors
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-2.5A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	300m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	601pF @ 30V
Current - Continuous Drain (Id) @ 25°C	2.5A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	2.5A
Threshold Voltage	2.6V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	60V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-2.6 V
Height	1.8mm
Length	6.5mm
Width	3.56mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free