NGB8206N

new-10%

Manufacturer part number:NGB8206N

Manufacturer:ON Semiconductor

Description:NGB8206N datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGB8206N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	2 (1 Year)
Number of Terminations	2
Terminal Finish	Tin/Lead (Sn80Pb20)
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	NGB8206
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Rise Time-Max	8000ns
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Case Connection	COLLECTOR
Input Type	Logic
Power - Max	150W
Transistor Application	AUTOMOTIVE IGNITION
Polarity/Channel Type	N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)	390V
Current - Collector (Ic) (Max)	20A
Power Dissipation-Max (Abs)	150W
Turn On Time	6500 ns
Test Condition	300V, 9A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic	1.9V @ 4.5V, 20A
Turn Off Time-Nom (toff)	18500 ns
Current - Collector Pulsed (Icm)	50A
Td (on/off) @ 25°C	-/5μs
Gate-Emitter Voltage-Max	15V
Gate-Emitter Thr Voltage-Max	2.1V
Fall Time-Max (tf)	14000ns
RoHS Status	Non-RoHS Compliant