IRG7PH35UD1-EP

new-10%

Manufacturer part number:IRG7PH35UD1-EP

Manufacturer:Infineon Technologies

Description:IRG7PH35UD1-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG7PH35UD1-EP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	179W
Peak Reflow Temperature (Cel)	250
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	IRG7PH35
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	179W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	50A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.2kV
Test Condition	600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 20A
Turn Off Time-Nom (toff)	400 ns
IGBT Type	Trench
Gate Charge	130nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	-/160ns
Switching Energy	620μJ (off)
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	105ns
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant