IRG4P254SPBF Description

IRG4P254SPBF is an N-channel single IGBT transistor from the manufacturer Infineon Technologies with the breakdown voltage of 250V. The operating temperature of the IRG4P254SPBF is -55°C~150°C TJ and its maximum power dissipation is 200W. IRG4P254SPBF has 3 pins and it is available in Bulk packaging way. The Collector Emitter Voltage (VCEO) of IRG4P254SPBF is 1.5V.

IRG4P254SPBF Features

• Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

• Generation 3

• Industry standard TO-247AC package

• Lead-Free

IRG4P254SPBF Applications

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

• High Power density

• Lower conduction losses than similarly rated MOSFET

• Lower Gate Charge than equivalent MOSFET

• Simple Gate Drive characteristics compared to Thyristors