NGTB30N120L2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTB30N120L2WG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 6 days ago)
Mount
Through Hole
Package / Case
TO-247
Number of Pins
3
Weight
6.500007g
Packaging
Tube
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
534W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
60A
Reverse Recovery Time
450 ns
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
1.7V
Height
21.4mm
Length
16.25mm
Width
5.3mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.328400
$7.3284
10
$6.913585
$69.13585
100
$6.522250
$652.225
500
$6.153066
$3076.533
1000
$5.804779
$5804.779
NGTB30N120L2WG Product Details
NGTB30N120L2WG Description
NGTB30N120L2WG developed by ON Semiconductor is a type of IGBT with Field Stop II Trench construction. It is able to deliver low on state voltage and minimal switching loss for demanding switching applications. Based on its specific characteristics, the NGTB30N120L2WG IGBT is well suited for a wide range of applications, including motor drive inverters, industrial switching, welding, and more.