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NGTB30N120L2WG

NGTB30N120L2WG

NGTB30N120L2WG

ON Semiconductor

NGTB30N120L2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTB30N120L2WG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Mount Through Hole
Package / Case TO-247
Number of Pins 3
Weight 6.500007g
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 534W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 60A
Reverse Recovery Time 450 ns
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 1.7V
Height 21.4mm
Length 16.25mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.328400 $7.3284
10 $6.913585 $69.13585
100 $6.522250 $652.225
500 $6.153066 $3076.533
1000 $5.804779 $5804.779
NGTB30N120L2WG Product Details

NGTB30N120L2WG Description


NGTB30N120L2WG developed by ON Semiconductor is a type of IGBT with Field Stop II Trench construction. It is able to deliver low on state voltage and minimal switching loss for demanding switching applications. Based on its specific characteristics, the NGTB30N120L2WG  IGBT is well suited for a wide range of applications, including motor drive inverters, industrial switching, welding, and more.



NGTB30N120L2WG Features


10 us short?circuit capability

Low on state voltage 

Minimal switching loss

Field Stop II Trench construction

TJmax = 175°C



NGTB30N120L2WG Applications


Motor drive inverters

Industrial switching

Welding


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