NGTB35N65FL2WG

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Manufacturer part number:NGTB35N65FL2WG

Manufacturer:ON Semiconductor

Description:NGTB35N65FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGTB35N65FL2WG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	21 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	300W
Element Configuration	Single
Input Type	Standard
Power - Max	300W
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	70A
Reverse Recovery Time	68 ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	2.2V
Test Condition	400V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 35A
IGBT Type	Trench Field Stop
Gate Charge	125nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	72ns/132ns
Switching Energy	840μJ (on), 280μJ (off)
Height	21.08mm
Length	16.26mm
Width	5.3mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$3.129520	$3.12952
10	$2.952377	$29.52377
100	$2.785262	$278.5262
500	$2.627605	$1313.8025
1000	$2.478873	$2478.873

NGTB35N65FL2WG IGBT Description

This Insulated Gate Bipolar Transistor (IGBT) NGTB35N65FL2WG features a robust and cost-effective Field Stop II Trench construction and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The NGTB35N65FL2WG is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.