NGTG15N60S1EG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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NGTG15N60S1EG Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 16 hours ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
2.299997g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
117W
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
65 ns
Power - Max
117W
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
170 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
30A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.95V
Turn On Time
93 ns
Test Condition
400V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 15A
Turn Off Time-Nom (toff)
440 ns
IGBT Type
NPT
Gate Charge
88nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
65ns/170ns
Switching Energy
550μJ (on), 350μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Height
15.75mm
Length
10.28mm
Width
4.82mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.147120
$6.14712
10
$5.799170
$57.9917
100
$5.470915
$547.0915
500
$5.161240
$2580.62
1000
$4.869095
$4869.095
NGTG15N60S1EG Product Details
NGTG15N60S1EG Description
The NGTG15N60S1EG Insulated Gate Bipolar Transistor (IGBT) has a NonPunch Through (NPT) Trench architecture that is both durable and cost-effective, and it performs well in demanding switching applications. The IGBT is well suited for motor drive control and other hard switching applications because it has a low on-state voltage and negligible switching loss.
NGTG15N60S1EG Features
This is a Pb?Free device
5s short circuit capability
Low switching loss in higher frequency applications
Low saturation voltage resulting in low conduction loss
Excellent current versus package size performance density