NJD2873T4G Overview

In this device, the DC current gain is 120 @ 500mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.In the part, the transition frequency is 65MHz.Breakdown input voltage is 50V volts.During maximum operation, collector current can be as low as 2A volts.

NJD2873T4G Features

the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 65MHz

NJD2873T4G Applications

There are a lot of ON Semiconductor NJD2873T4G applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter