NJL0281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJL0281DG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-264-5
Number of Pins
5
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
-260V
Max Power Dissipation
180W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
-15A
Frequency
30MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
5
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
180W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
260V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 3A 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 500mA, 5A
Collector Emitter Breakdown Voltage
260V
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
260V
Emitter Base Voltage (VEBO)
5V
hFE Min
75
Height
26.111mm
Length
20.02mm
Width
5.182mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.205000
$6.205
10
$5.853774
$58.53774
100
$5.522428
$552.2428
500
$5.209838
$2604.919
1000
$4.914941
$4914.941
NJL0281DG Product Details
NJL0281DG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 75 @ 3A 5V.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 500mA, 5A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -15A.There is a transition frequency of 30MHz in the part.A maximum collector current of 15A volts is possible.
NJL0281DG Features
the DC current gain for this device is 75 @ 3A 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 500mA, 5A the emitter base voltage is kept at 5V the current rating of this device is -15A a transition frequency of 30MHz
NJL0281DG Applications
There are a lot of ON Semiconductor NJL0281DG applications of single BJT transistors.