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NJL0281DG

NJL0281DG

NJL0281DG

ON Semiconductor

NJL0281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJL0281DG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-5
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -260V
Max Power Dissipation 180W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating -15A
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 5
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 180W
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 260V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 3A 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 5A
Collector Emitter Breakdown Voltage 260V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 260V
Emitter Base Voltage (VEBO) 5V
hFE Min 75
Height 26.111mm
Length 20.02mm
Width 5.182mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.205000 $6.205
10 $5.853774 $58.53774
100 $5.522428 $552.2428
500 $5.209838 $2604.919
1000 $4.914941 $4914.941
NJL0281DG Product Details

NJL0281DG Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 75 @ 3A 5V.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 500mA, 5A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -15A.There is a transition frequency of 30MHz in the part.A maximum collector current of 15A volts is possible.

NJL0281DG Features


the DC current gain for this device is 75 @ 3A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz

NJL0281DG Applications


There are a lot of ON Semiconductor NJL0281DG applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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