NJT4030PT3G Overview

DC current gain in this device equals 200 @ 1A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.In the part, the transition frequency is 160MHz.There is a breakdown input voltage of 40V volts that it can take.Maximum collector currents can be below 3A volts.

NJT4030PT3G Features

the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz

NJT4030PT3G Applications

There are a lot of ON Semiconductor NJT4030PT3G applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter