NJV4030PT1G Overview
In this device, the DC current gain is 200 @ 1A 1V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 300mA, 3A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.There is a transition frequency of 160MHz in the part.A breakdown input voltage of 40V volts can be used.When collector current reaches its maximum, it can reach 3A volts.
NJV4030PT1G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz
NJV4030PT1G Applications
There are a lot of ON Semiconductor NJV4030PT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
