KSD526YTU Overview
In this device, the DC current gain is 120 @ 500mA 5V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 450mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 300mA, 3A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 8MHz in the part.The maximum collector current is 4A volts.
KSD526YTU Features
the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 8MHz
KSD526YTU Applications
There are a lot of ON Semiconductor KSD526YTU applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
