BC81825MTF Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.There is a transition frequency of 100MHz in the part.Breakdown input voltage is 25V volts.When collector current reaches its maximum, it can reach 800mA volts.

BC81825MTF Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC81825MTF Applications

There are a lot of ON Semiconductor BC81825MTF applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter