BC846AW-7-F Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at 100mA for high efficiency.The emitter base voltage can be kept at 6V for high efficiency.In the part, the transition frequency is 300MHz.Single BJT transistor can be broken down at a voltage of 65V volts.A maximum collector current of 100mA volts can be achieved.

BC846AW-7-F Features

the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

BC846AW-7-F Applications

There are a lot of Diodes Incorporated BC846AW-7-F applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter