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PBSS3515E,135

  • PBSS3515E,135
  • PBSS3515E,135

PBSS3515E,135

PBSS3515E,135

NXP USA Inc.

PBSS3515E,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available on our website

SOT-23

PBSS3515E,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number PBSS3515
Pin Count 3
Power - Max 250mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 15V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 280MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.03000 $0.03
500 $0.0297 $14.85
1000 $0.0294 $29.4
1500 $0.0291 $43.65
2000 $0.0288 $57.6
2500 $0.0285 $71.25
PBSS3515E,135 Product Details

PBSS3515E,135 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 100mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 50mA, 500mA.Collector Emitter Breakdown occurs at 15VV - Maximum voltage.

PBSS3515E,135 Features


the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA

PBSS3515E,135 Applications


There are a lot of NXP USA Inc. PBSS3515E,135 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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