NJVMJD44H11G Overview

This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Continuous collector voltages of 8A should be maintained to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.The part has a transition frequency of 85MHz.Maximum collector currents can be below 8A volts.

NJVMJD44H11G Features

the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 85MHz

NJVMJD44H11G Applications

There are a lot of ON Semiconductor NJVMJD44H11G applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver