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ZXTPS717MCTA

ZXTPS717MCTA

ZXTPS717MCTA

Diodes Incorporated

ZXTPS717MCTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTPS717MCTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2016
JESD-609 Code e4
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Max Power Dissipation3W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Polarity NPN
Element ConfigurationDual
Transistor Application SWITCHING
Gain Bandwidth Product110MHz
Transistor Type PNP + Diode (Isolated)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 310mV @ 150mA, 4A
Collector Emitter Breakdown Voltage12V
Current - Collector (Ic) (Max) 4.4A
Transition Frequency 110MHz
Collector Emitter Saturation Voltage-10mV
Max Breakdown Voltage 12V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) -20V
Emitter Base Voltage (VEBO) -7V
Continuous Collector Current -4A
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:9656 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.141030$2.14103
10$2.019840$20.1984
100$1.905509$190.5509
500$1.797650$898.825
1000$1.695897$1695.897

ZXTPS717MCTA Product Details

ZXTPS717MCTA Overview


This device has a DC current gain of 300 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -10mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 310mV @ 150mA, 4A.Maintaining the continuous collector voltage at -4A is essential for high efficiency.An emitter's base voltage can be kept at -7V to gain high efficiency.Parts of this part have transition frequencies of 110MHz.An input voltage of 12V volts is the breakdown voltage.The maximum collector current is 4A volts.

ZXTPS717MCTA Features


the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -10mV
the vce saturation(Max) is 310mV @ 150mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 110MHz

ZXTPS717MCTA Applications


There are a lot of Diodes Incorporated ZXTPS717MCTA applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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