ZXTPS717MCTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTPS717MCTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
Other Transistors
Max Power Dissipation
3W
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Dual
Transistor Application
SWITCHING
Gain Bandwidth Product
110MHz
Transistor Type
PNP + Diode (Isolated)
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
310mV @ 150mA, 4A
Collector Emitter Breakdown Voltage
12V
Current - Collector (Ic) (Max)
4.4A
Transition Frequency
110MHz
Collector Emitter Saturation Voltage
-10mV
Max Breakdown Voltage
12V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
-20V
Emitter Base Voltage (VEBO)
-7V
Continuous Collector Current
-4A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.141030
$2.14103
10
$2.019840
$20.1984
100
$1.905509
$190.5509
500
$1.797650
$898.825
1000
$1.695897
$1695.897
ZXTPS717MCTA Product Details
ZXTPS717MCTA Overview
This device has a DC current gain of 300 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -10mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 310mV @ 150mA, 4A.Maintaining the continuous collector voltage at -4A is essential for high efficiency.An emitter's base voltage can be kept at -7V to gain high efficiency.Parts of this part have transition frequencies of 110MHz.An input voltage of 12V volts is the breakdown voltage.The maximum collector current is 4A volts.
ZXTPS717MCTA Features
the DC current gain for this device is 300 @ 100mA 2V a collector emitter saturation voltage of -10mV the vce saturation(Max) is 310mV @ 150mA, 4A the emitter base voltage is kept at -7V a transition frequency of 110MHz
ZXTPS717MCTA Applications
There are a lot of Diodes Incorporated ZXTPS717MCTA applications of single BJT transistors.