MMBT6427-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBT6427-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MMBT6427
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 100mA 5V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500μA, 500mA
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
1.2V
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
12V
hFE Min
10000
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.04707
$0.14121
6,000
$0.04140
$0.2484
15,000
$0.03573
$0.53595
30,000
$0.03384
$1.0152
75,000
$0.03195
$2.39625
150,000
$0.02880
$4.32
MMBT6427-7-F Product Details
MMBT6427-7-F Overview
DC current gain in this device equals 20000 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.2V, which allows for maximum design flexibility.A VCE saturation (Max) of 1.5V @ 500μA, 500mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 12V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor can take a breakdown input voltage of 40V volts.Maximum collector currents can be below 500mA volts.
MMBT6427-7-F Features
the DC current gain for this device is 20000 @ 100mA 5V a collector emitter saturation voltage of 1.2V the vce saturation(Max) is 1.5V @ 500μA, 500mA the emitter base voltage is kept at 12V the current rating of this device is 500mA
MMBT6427-7-F Applications
There are a lot of Diodes Incorporated MMBT6427-7-F applications of single BJT transistors.