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MMBT6427-7-F

MMBT6427-7-F

MMBT6427-7-F

Diodes Incorporated

MMBT6427-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMBT6427-7-F Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMBT6427
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500μA, 500mA
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 1.2V
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 12V
hFE Min 10000
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.04707 $0.14121
6,000 $0.04140 $0.2484
15,000 $0.03573 $0.53595
30,000 $0.03384 $1.0152
75,000 $0.03195 $2.39625
150,000 $0.02880 $4.32
MMBT6427-7-F Product Details

MMBT6427-7-F Overview


DC current gain in this device equals 20000 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.2V, which allows for maximum design flexibility.A VCE saturation (Max) of 1.5V @ 500μA, 500mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 12V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor can take a breakdown input voltage of 40V volts.Maximum collector currents can be below 500mA volts.

MMBT6427-7-F Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA

MMBT6427-7-F Applications


There are a lot of Diodes Incorporated MMBT6427-7-F applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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