SBCW72LT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 500μA, 10mA.Emitter base voltages of 5V can achieve high levels of efficiency.In this part, there is a transition frequency of 300MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
SBCW72LT1G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz
SBCW72LT1G Applications
There are a lot of ON Semiconductor SBCW72LT1G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
