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SBCW72LT1G

  • SBCW72LT1G
  • SBCW72LT1G

SBCW72LT1G

SBCW72LT1G

ON Semiconductor

SBCW72LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SBCW72LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 300MHz
Base Part Number BCW72
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 300MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.156000 $0.156
10 $0.147170 $1.4717
100 $0.138839 $13.8839
500 $0.130981 $65.4905
1000 $0.123567 $123.567
SBCW72LT1G Product Details

SBCW72LT1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 500μA, 10mA.Emitter base voltages of 5V can achieve high levels of efficiency.In this part, there is a transition frequency of 300MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

SBCW72LT1G Features


the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz

SBCW72LT1G Applications


There are a lot of ON Semiconductor SBCW72LT1G applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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