ZXTN19055DZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN19055DZTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
55V
Max Power Dissipation
2.1W
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
6A
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN19055
Pin Count
6
JESD-30 Code
R-PDSO-F6
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.1W
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
55V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 10mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 600mA, 6A
Collector Emitter Breakdown Voltage
55V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
55V
Collector Base Voltage (VCBO)
150V
Emitter Base Voltage (VEBO)
7V
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.026720
$2.02672
10
$1.912000
$19.12
100
$1.803774
$180.3774
500
$1.701673
$850.8365
1000
$1.605352
$1605.352
ZXTN19055DZTA Product Details
ZXTN19055DZTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 10mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 600mA, 6A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.In the part, the transition frequency is 200MHz.An input voltage of 55V volts is the breakdown voltage.A maximum collector current of 6A volts can be achieved.
ZXTN19055DZTA Features
the DC current gain for this device is 250 @ 10mA 2V a collector emitter saturation voltage of 250mV the vce saturation(Max) is 250mV @ 600mA, 6A the emitter base voltage is kept at 7V the current rating of this device is 6A a transition frequency of 200MHz
ZXTN19055DZTA Applications
There are a lot of Diodes Incorporated ZXTN19055DZTA applications of single BJT transistors.