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ZXTN19055DZTA

ZXTN19055DZTA

ZXTN19055DZTA

Diodes Incorporated

ZXTN19055DZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTN19055DZTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 55V
Max Power Dissipation 2.1W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 6A
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTN19055
Pin Count 6
JESD-30 Code R-PDSO-F6
Number of Elements 1
Element Configuration Single
Power Dissipation 2.1W
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 55V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 600mA, 6A
Collector Emitter Breakdown Voltage 55V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 55V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 7V
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.026720 $2.02672
10 $1.912000 $19.12
100 $1.803774 $180.3774
500 $1.701673 $850.8365
1000 $1.605352 $1605.352
ZXTN19055DZTA Product Details

ZXTN19055DZTA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 10mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 600mA, 6A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.In the part, the transition frequency is 200MHz.An input voltage of 55V volts is the breakdown voltage.A maximum collector current of 6A volts can be achieved.

ZXTN19055DZTA Features


the DC current gain for this device is 250 @ 10mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 600mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 200MHz

ZXTN19055DZTA Applications


There are a lot of Diodes Incorporated ZXTN19055DZTA applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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