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NJVNJD2873T4G-VF01

NJVNJD2873T4G-VF01

NJVNJD2873T4G-VF01

ON Semiconductor

NJVNJD2873T4G-VF01 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVNJD2873T4G-VF01 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -65°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number NJD2873
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1.68W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 2A
Transition Frequency 65MHz
Frequency - Transition 65MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.30952 $0.61904
5,000 $0.28818 $1.4409
12,500 $0.28462 $3.41544
NJVNJD2873T4G-VF01 Product Details

NJVNJD2873T4G-VF01 Overview


DC current gain in this device equals 120 @ 500mA 2V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 65MHz in the part.There is a 50V maximal voltage in the device due to collector-emitter breakdown.

NJVNJD2873T4G-VF01 Features


the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
a transition frequency of 65MHz

NJVNJD2873T4G-VF01 Applications


There are a lot of ON Semiconductor NJVNJD2873T4G-VF01 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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