NSL12AWT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 800mA 1.5 V.As it features a collector emitter saturation voltage of -170mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 100MHz.There is a breakdown input voltage of 12V volts that it can take.Collector current can be as low as 2A volts at its maximum.
NSL12AWT1G Features
the DC current gain for this device is 100 @ 800mA 1.5 V
a collector emitter saturation voltage of -170mV
the vce saturation(Max) is 290mV @ 20mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 100MHz
NSL12AWT1G Applications
There are a lot of ON Semiconductor NSL12AWT1G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
