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FMMT489TA

FMMT489TA

FMMT489TA

Diodes Incorporated

FMMT489TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT489TA Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT489
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 600mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 1A
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.46000 $0.46
500 $0.4554 $227.7
1000 $0.4508 $450.8
1500 $0.4462 $669.3
2000 $0.4416 $883.2
2500 $0.437 $1092.5
FMMT489TA Product Details

FMMT489TA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 2V.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In the part, the transition frequency is 150MHz.A breakdown input voltage of 30V volts can be used.When collector current reaches its maximum, it can reach 1A volts.

FMMT489TA Features


the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz

FMMT489TA Applications


There are a lot of Diodes Incorporated FMMT489TA applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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