NSS12100XV6T1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of -400mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 440mV @ 100mA, 1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.A transition frequency of 100MHz is present in the part.A breakdown input voltage of 12V volts can be used.Maximum collector currents can be below 1A volts.
NSS12100XV6T1G Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 440mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
NSS12100XV6T1G Applications
There are a lot of ON Semiconductor NSS12100XV6T1G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
