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NSS1C201MZ4T3G

  • NSS1C201MZ4T3G
  • NSS1C201MZ4T3G

NSS1C201MZ4T3G

NSS1C201MZ4T3G

ON Semiconductor

NSS1C201MZ4T3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSS1C201MZ4T3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 42 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number NSS1C201
Pin Count 4
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 800mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 180mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 100V
Current - Collector (Ic) (Max) 2A
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.534032 $1.534032
10 $1.447200 $14.472
100 $1.365283 $136.5283
500 $1.288003 $644.0015
1000 $1.215097 $1215.097
NSS1C201MZ4T3G Product Details

NSS1C201MZ4T3G Overview


This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 180mV @ 200mA, 2A.The base voltage of the emitter can be kept at 7V to achieve high efficiency.100MHz is present in the transition frequency.A maximum collector current of 2A volts is possible.

NSS1C201MZ4T3G Features


the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz

NSS1C201MZ4T3G Applications


There are a lot of ON Semiconductor NSS1C201MZ4T3G applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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