BC817-40,215 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 100mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.A maximum collector current of 500mA volts can be achieved.

BC817-40,215 Features

the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC817-40,215 Applications

There are a lot of Nexperia USA Inc. BC817-40,215 applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver