2SA2125-TD-E Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 500mV @ 100mA, 2A means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at -6V to achieve high efficiency.Single BJT transistor can be broken down at a voltage of 50V volts.In extreme cases, the collector current can be as low as 3A volts.

2SA2125-TD-E Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at -6V

2SA2125-TD-E Applications

There are a lot of ON Semiconductor 2SA2125-TD-E applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting