2SD1048-6-TB-E Overview

In this device, the DC current gain is 200 @ 50mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 80mV, which allows for maximum design flexibility.When VCE saturation is 80mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 250MHz.Single BJT transistor can take a breakdown input voltage of 15V volts.Collector current can be as low as 700mA volts at its maximum.

2SD1048-6-TB-E Features

the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz

2SD1048-6-TB-E Applications

There are a lot of ON Semiconductor 2SD1048-6-TB-E applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter