TIP110G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 1A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.Single BJT transistor is essential to maintain the continuous collector voltage at 2A to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.The maximum collector current is 2A volts.

TIP110G Features

the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A

TIP110G Applications

There are a lot of ON Semiconductor TIP110G applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting