Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NSS40301MZ4T1G

NSS40301MZ4T1G

NSS40301MZ4T1G

ON Semiconductor

NSS40301MZ4T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSS40301MZ4T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 215MHz
Base Part Number NSS40301
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 215MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 215MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 6V
hFE Min 220
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.60000 $0.6
500 $0.594 $297
1000 $0.588 $588
1500 $0.582 $873
2000 $0.576 $1152
2500 $0.57 $1425
NSS40301MZ4T1G Product Details

NSS40301MZ4T1G Overview


In this device, the DC current gain is 200 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 300mA, 3A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.215MHz is present in the transition frequency.There is a breakdown input voltage of 40V volts that it can take.Maximum collector currents can be below 3A volts.

NSS40301MZ4T1G Features


the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 215MHz

NSS40301MZ4T1G Applications


There are a lot of ON Semiconductor NSS40301MZ4T1G applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News