NSS40301MZ4T1G Overview
In this device, the DC current gain is 200 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 300mA, 3A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.215MHz is present in the transition frequency.There is a breakdown input voltage of 40V volts that it can take.Maximum collector currents can be below 3A volts.
NSS40301MZ4T1G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 215MHz
NSS40301MZ4T1G Applications
There are a lot of ON Semiconductor NSS40301MZ4T1G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
