NSS40500UW3T2G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 2A 2V.This design offers maximum flexibility with a collector emitter saturation voltage of -310mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.As you can see, the part has a transition frequency of 100MHz.When collector current reaches its maximum, it can reach 5A volts.
NSS40500UW3T2G Features
the DC current gain for this device is 180 @ 2A 2V
a collector emitter saturation voltage of -310mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS40500UW3T2G Applications
There are a lot of ON Semiconductor NSS40500UW3T2G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
