NST489AMT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 500mA 5V.With a collector emitter saturation voltage of 100mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 100mA, 1A.Emitter base voltages of 5V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.There is a transition frequency of 300MHz in the part.A breakdown input voltage of 30V volts can be used.When collector current reaches its maximum, it can reach 2A volts.
NST489AMT1G Features
the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 300MHz
NST489AMT1G Applications
There are a lot of ON Semiconductor NST489AMT1G applications of single BJT transistors.
- Inverter
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- Driver
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- Muting
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- Interface
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