NSV40301MZ4T1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 300mA, 3A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.In extreme cases, the collector current can be as low as 3A volts.
NSV40301MZ4T1G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 300mA, 3A
the emitter base voltage is kept at 6V
NSV40301MZ4T1G Applications
There are a lot of ON Semiconductor NSV40301MZ4T1G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
