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NSVBCX17LT1G

  • NSVBCX17LT1G
  • NSVBCX17LT1G

NSVBCX17LT1G

NSVBCX17LT1G

ON Semiconductor

NSVBCX17LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVBCX17LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Reference Standard AEC-Q101
Number of Elements 1
Configuration SINGLE
Power - Max 225mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 620mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 620mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.392000 $0.392
10 $0.369811 $3.69811
100 $0.348879 $34.8879
500 $0.329131 $164.5655
1000 $0.310501 $310.501
NSVBCX17LT1G Product Details

NSVBCX17LT1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 620mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Maximum collector currents can be below 500mA volts.

NSVBCX17LT1G Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

NSVBCX17LT1G Applications


There are a lot of ON Semiconductor NSVBCX17LT1G applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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