NSVBCX17LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 620mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Maximum collector currents can be below 500mA volts.
NSVBCX17LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
NSVBCX17LT1G Applications
There are a lot of ON Semiconductor NSVBCX17LT1G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
