NSVBSS63LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSVBSS63LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
225mW
Pin Count
3
Element Configuration
Single
Halogen Free
Halogen Free
Gain Bandwidth Product
95MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 25mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 2.5mA, 25mA
Collector Emitter Breakdown Voltage
100V
Current - Collector (Ic) (Max)
100mA
Collector Base Voltage (VCBO)
110V
hFE Min
30
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.939584
$0.939584
10
$0.886400
$8.864
100
$0.836226
$83.6226
500
$0.788893
$394.4465
1000
$0.744239
$744.239
NSVBSS63LT1G Product Details
NSVBSS63LT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 25mA 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 2.5mA, 25mA.During maximum operation, collector current can be as low as 100mA volts.
NSVBSS63LT1G Features
the DC current gain for this device is 30 @ 25mA 1V the vce saturation(Max) is 250mV @ 2.5mA, 25mA
NSVBSS63LT1G Applications
There are a lot of ON Semiconductor NSVBSS63LT1G applications of single BJT transistors.
