NSVMMBT5401M3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSVMMBT5401M3T5G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
SOT-723
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
130mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
60mA
Frequency - Transition
180MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.361000
$0.361
10
$0.340566
$3.40566
100
$0.321289
$32.1289
500
$0.303103
$151.5515
1000
$0.285946
$285.946
NSVMMBT5401M3T5G Product Details
NSVMMBT5401M3T5G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 50mA.Single BJT transistor shows a 150V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
NSVMMBT5401M3T5G Features
the DC current gain for this device is 60 @ 10mA 5V the vce saturation(Max) is 600mV @ 5mA, 50mA
NSVMMBT5401M3T5G Applications
There are a lot of ON Semiconductor NSVMMBT5401M3T5G applications of single BJT transistors.