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NSVMMBT5401M3T5G

NSVMMBT5401M3T5G

NSVMMBT5401M3T5G

ON Semiconductor

NSVMMBT5401M3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVMMBT5401M3T5G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case SOT-723
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 130mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 60mA
Frequency - Transition 180MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.361000 $0.361
10 $0.340566 $3.40566
100 $0.321289 $32.1289
500 $0.303103 $151.5515
1000 $0.285946 $285.946
NSVMMBT5401M3T5G Product Details

NSVMMBT5401M3T5G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 50mA.Single BJT transistor shows a 150V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

NSVMMBT5401M3T5G Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 600mV @ 5mA, 50mA

NSVMMBT5401M3T5G Applications


There are a lot of ON Semiconductor NSVMMBT5401M3T5G applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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