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NSVMMBT5401WT1G

NSVMMBT5401WT1G

NSVMMBT5401WT1G

ON Semiconductor

NSVMMBT5401WT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVMMBT5401WT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series Automotive, AEC-Q101
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Power Dissipation 400mW
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE
Power - Max 400mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 150V
Transition Frequency 100MHz
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.180000 $0.18
10 $0.169811 $1.69811
100 $0.160199 $16.0199
500 $0.151131 $75.5655
1000 $0.142577 $142.577
NSVMMBT5401WT1G Product Details

NSVMMBT5401WT1G Overview


This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.A transition frequency of 100MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.

NSVMMBT5401WT1G Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

NSVMMBT5401WT1G Applications


There are a lot of ON Semiconductor NSVMMBT5401WT1G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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