Welcome to Hotenda.com Online Store!

logo
userjoin
Home

DSS5240T-7

DSS5240T-7

DSS5240T-7

Diodes Incorporated

DSS5240T-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DSS5240T-7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 600mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DSS5240
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 730mW
Power - Max 600mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -350mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 300
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.130920 $0.13092
10 $0.123509 $1.23509
100 $0.116518 $11.6518
500 $0.109923 $54.9615
1000 $0.103701 $103.701
DSS5240T-7 Product Details

DSS5240T-7 Overview


DC current gain in this device equals 210 @ 1A 2V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -350mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 200mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.There is a transition frequency of 100MHz in the part.There is a breakdown input voltage of 40V volts that it can take.During maximum operation, collector current can be as low as 2A volts.

DSS5240T-7 Features


the DC current gain for this device is 210 @ 1A 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

DSS5240T-7 Applications


There are a lot of Diodes Incorporated DSS5240T-7 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News