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MJE210G

MJE210G

MJE210G

ON Semiconductor

MJE210G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE210G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -25V
Max Power Dissipation 15W
Peak Reflow Temperature (Cel) 260
Current Rating -5A
Frequency 65MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJE210
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 15W
Transistor Application AMPLIFIER
Gain Bandwidth Product 65MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 65MHz
Collector Emitter Saturation Voltage 1.8V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 8V
hFE Min 70
Height 11.0998mm
Length 7.7978mm
Width 2.9972mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.54000 $0.54
10 $0.46500 $4.65
100 $0.34750 $34.75
500 $0.27304 $136.52
1,000 $0.21099 $0.21099
MJE210G Product Details

MJE210G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 45 @ 2A 1V.A collector emitter saturation voltage of 1.8V allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1A, 5A.Emitter base voltages of 8V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5A.In this part, there is a transition frequency of 65MHz.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

MJE210G Features


the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is -5A
a transition frequency of 65MHz

MJE210G Applications


There are a lot of ON Semiconductor MJE210G applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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