MJE210G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 45 @ 2A 1V.A collector emitter saturation voltage of 1.8V allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1A, 5A.Emitter base voltages of 8V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5A.In this part, there is a transition frequency of 65MHz.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

MJE210G Features

the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is -5A
a transition frequency of 65MHz

MJE210G Applications

There are a lot of ON Semiconductor MJE210G applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting