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PHE13009/DG,127

PHE13009/DG,127

PHE13009/DG,127

WeEn Semiconductors

PHE13009/DG,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

PHE13009/DG,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Power - Max 80W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 2V @ 1.6A, 8A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 12A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.782159 $0.782159
10 $0.737886 $7.37886
100 $0.696119 $69.6119
500 $0.656716 $328.358
1000 $0.619544 $619.544
PHE13009/DG,127 Product Details

PHE13009/DG,127 Overview


This device has a DC current gain of 8 @ 5A 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 1.6A, 8A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

PHE13009/DG,127 Features


the DC current gain for this device is 8 @ 5A 5V
the vce saturation(Max) is 2V @ 1.6A, 8A

PHE13009/DG,127 Applications


There are a lot of WeEn Semiconductors PHE13009/DG,127 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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