PHE13009/DG,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
PHE13009/DG,127 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Power - Max
80W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 5A 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
2V @ 1.6A, 8A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
12A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.782159
$0.782159
10
$0.737886
$7.37886
100
$0.696119
$69.6119
500
$0.656716
$328.358
1000
$0.619544
$619.544
PHE13009/DG,127 Product Details
PHE13009/DG,127 Overview
This device has a DC current gain of 8 @ 5A 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 1.6A, 8A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PHE13009/DG,127 Features
the DC current gain for this device is 8 @ 5A 5V the vce saturation(Max) is 2V @ 1.6A, 8A
PHE13009/DG,127 Applications
There are a lot of WeEn Semiconductors PHE13009/DG,127 applications of single BJT transistors.