SI2303BDS-T1

new-10%

Manufacturer part number:SI2303BDS-T1

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 30V 1.49A SOT23

Case Package:SOT-23

Datasheet:SI2303BDS-T1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Supplier Device Package	SOT-23-3 (TO-236)
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	700mW Ta
Element Configuration	Single
Power Dissipation	900mW
Turn On Delay Time	55 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	200mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 15V
Current - Continuous Drain (Id) @ 25°C	1.49A Ta
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Rise Time	40ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	1.49A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-30V
Input Capacitance	180pF
Drain to Source Resistance	200mOhm
Rds On Max	200 mΩ
Height	1.02mm
Length	3.04mm
Width	1.4mm
RoHS Status	ROHS3 Compliant