NTD4815N-1G

new-10%

Manufacturer part number:NTD4815N-1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 6.9A IPAK

Case Package:SOT-23

Datasheet:NTD4815N-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	35A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.26W Ta 32.6W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.92W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	770pF @ 12V
Current - Continuous Drain (Id) @ 25°C	6.9A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs	6.6nC @ 4.5V
Rise Time	21.4ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 11.5V
Vgs (Max)	±20V
Fall Time (Typ)	21.4 ns
Turn-Off Delay Time	11.4 ns
Continuous Drain Current (ID)	35A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6.9A
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	87A
Avalanche Energy Rating (Eas)	60.5 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free