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NTD4857NT4G

NTD4857NT4G

NTD4857NT4G

ON Semiconductor

MOSFET N-CH 25V 12A DPAK

SOT-23

NTD4857NT4G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.31W Ta 56.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 12V
Current - Continuous Drain (Id) @ 25°C 12A Ta 78A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Rise Time 18.7ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 14.6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 78A
Drain-source On Resistance-Max 0.008Ohm
Drain to Source Breakdown Voltage 25V
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.509146 $1.509146
10 $1.423722 $14.23722
100 $1.343135 $134.3135
500 $1.267108 $633.554
1000 $1.195384 $1195.384

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