STP80N20M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STP80N20M5 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ V
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
23MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP80N
Pin Count
3
Number of Elements
1
Voltage
200V
Power Dissipation-Max
190W Tc
Element Configuration
Single
Current
61A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
190W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
23m Ω @ 30.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4329pF @ 50V
Current - Continuous Drain (Id) @ 25°C
61A Tc
Gate Charge (Qg) (Max) @ Vgs
104nC @ 10V
Rise Time
31ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
176 ns
Turn-Off Delay Time
131 ns
Continuous Drain Current (ID)
61A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
200V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
STP80N20M5 Product Details
STP80N20M5 Description
STP80N20M5 is N-channel Power MOSFETs based on the MDmesh? M5 innovative vertical process technology combined with the well-known PowerMESH? horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.