IRFS4229PBF   Description

 This HEXFET power MOSFET is designed for sustainable energy recovery and switching applications in plasma display panels. This MOSFET uses the latest technology to achieve low silicon area on-resistance and low power consumption. In addition, the MOSFET also has the ability of 175 °working junction temperature and high repetitive peak current. The combination of these features makes the MOSFET an efficient, rugged and reliable device in PDP-driven applications.

IRFS4229PBF    Features 

Advanced Process Technology

Key Parameters Optimized for PDP Sustain,

 Energy Recovery and Pass Switch Applications

Low EPULSE Rating to Reduce Power

 Dissipation in PDP Sustain, Energy Recovery

 and Pass Switch Applications

Low QG for Fast Response

High Repetitive Peak Current Capability for

 Reliable Operation

Short Fall & Rise Times for Fast Switching

175°C Operating Junction Temperature for

 Improved Ruggedness

Repetitive Avalanche Capability for Robustness

 and Reliability

IRFS4229PBF   Applications

switching applications